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February 2009
NDT451AN
N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field
effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This very
high density process is especially tailored to minimize
on-state resistance and provide superior switching
performance. These devices are particularly suited for low
voltage applications such as DC motor control and DC/DC
conversion where fast switching, low in-line power loss,
and resistance to transients are needed.
Features
7.2A, 30V. R DS(ON) = 0.035 ? @ V GS = 10V
R DS(ON) = 0.05 ? @ V GS = 4.5V.
High density cell design for extremely low R DS(ON) .
High power and current handling capability in a widely used
surface mount package.
________________________________________________________________________________
D
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
G
D
S
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
NDT451AN
30
± 20
Units
V
V
I D
Drain Current - Continuous
(Note 1a)
± 7.2
A
- Pulsed
± 25
P D
Maximum Power Dissipation
(Note 1a)
3
W
(Note 1b)
(Note 1c)
1.3
1.1
T J ,T STG
Operating and Storage Temperature Range
-65 to 150
°C
THERMAL CHARACTERISTICS
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
42
12
°C/W
°C/W
@ 2009 Fairchild Semiconductor Corporation
NDT451AN Rev. D1
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相关代理商/技术参数
NDT451AN_Q 功能描述:MOSFET N-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT451AN-CUT TAPE 制造商:FAIRCHILD 功能描述:NDT Series N-Ch 30V 0.035 O Enhancement Mode Field Effect Transistor- SOT-223
NDT451N 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT451N_J23Z 功能描述:MOSFET DISC BY MFG 2/02 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:P-Channel Enhancement Mode Field Effect Transistor
NDT452AP 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDT452AP(J23Z) 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 5A I(D) | SOT-223
NDT452AP 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-223